News & Event

Taiyo Nippon Sanso is planning a presentation during the poster session at the 2016 MRS Spring Meeting & Exhibit from March 28 to April 1 at the Phoenix Convention Center.
The topic will be “Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer.” 

Taiyo Nippon Sanso is planning a presentation during the ISPlasma symposium from March 6 to 10, 2016 at Nagoya University.
The topic will be “Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates.”

Taiyo Nippon Sanso is planning a presentation during the oral cession IEICE Technical Committee from November 26 to 27, 2015 at Osaka City University Media center in Osaka, Japan.
Topic will be "Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate" 

Taiyo Nippon Sanso is planning a presentation at The 6th International Symposium on Growth of Ⅲ-Nitrides from November 8 to 13, 2015 at Act City Hamamatsu in Hamamatsu, Japan.
Topic of the poster session will be "Si-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-speed-flow MOVPE reactor"
Topic of the keynote lecture will be "Opportunities and Challenges to GaN MOCVD for Electron Devices" 

Taiyo Nippon Sanso is planning a presentation during the oral session at The 9th International Workshop on Bulk Nitride Semiconductors from November 2 to 6, 2015 at Oak Valley in Wonju, South Korea.
Topic will be "Low C and Si residual concentration of GaN grown on GaN Substrates by MOCVD" 

Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)

Taiyo Nippon Sanso plans to have a booth at the Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP) from August 20 to 21, 2015 at Hilton Fukuoka Sea Hawk in Fukuoka, Japan.

Taiyo Nippon Sanso plans to have a booth at the 11th Topical Workshop on Heterostructure Microelectronics (TWHM) from August 23 to 26, 2015 at Hida Hotel Plaza in Takayama, Japan.
It is also planning to participate in the poster session on the topic of "Correlation of initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances". 

Taiyo Nippon Sanso plans to have a booth at the 11th International Conference on Nitride Semiconductors (ICNS-11) from August 30 to September 4, 2015 at the Beijing International Convention Center in Beijing, China.

Taiyo Nippon Sanso plans to have a booth at LED Taiwan 2015 from March 25 to 28, 2015 at the TWTC Nangang Exhibit Hall in Taipei, Taiwan.

TAIYO NIPPON SANSO Corporation's MOCVD system was mentioned in THE GAS REVIEW No. 396 (November 26, 2014 issue) article about the Nobel Prize in Physics.

Sandia National Laboratories Orders Commercial Grade GaN-MOCVD System from Matheson/Taiyo Nippon Sanso

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.

In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements

Development of RGB monolithic GaInN-based μLED arrays with tunnel junctions

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al_0.72Ga_0.28N channel grown on a single-crystal AlN substrate by metalorganic chemical vapor deposition

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

DC and Pulse I–V Characteristics of Strain-Engineered AlGaInN/GaN HEMTs fabricated on Single-Crystal AlN Substrate

High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE