News & Event

Taiyo Nippon Sanso plans to have a booth at IWN 2014 (International Workshop on Nitride Semiconductors 2014) from August 24 to 29, 2014 at the Centennial Hall in Wroclaw, Poland.

Taiyo Nippon Sanso will be holding a booth at the 5th International Symposium on Growth of Ⅲ-Nitrides (ISGN-5) at the Westin Hotel, Peachtree Plaza (Atlanta, Georgia) from May 18 to 22, 2014.

TNSC Signs Technical MOCVD Agreement With ITRI — LEDinside

ITRI and TNSC Unite to Promote UVA LED Production on GaN Substrate — LEDinside

ITRI and TNSC unite to enhance GaN LED growth — Compound Semiconductor

TNSC Announces Technical Agreement with ITRI
TNSC, a manufacturer of metal organic chemical vapor deposition (MOCVD) systems, has signed a technical agreement with Taiwan-based ITRI, which is known for its world-class technologies for optoelectronic devices. The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary advanced technology of Taiyo Nippon Sanso. ITRI recognizes that the TNSC AP-MOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN thanks to high quality. Potentially, ITRI and TNSC can develop a higher performance UVA LED on a native GaN substrate at a reasonable price than on a conventional sapphire substrate, because it can inject more current into an LED on a native GaN substrate due to low dislocation density and easy current spreading. The near-ideal point light source will improve the utilization efficiency of UV light with simple optics. ITRI and TNSC hope that the partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V) Appl. Phys. Express 7, 041003 (2014)

Industry MOCVD: III-N film growth Compound Semiconductor-Volume 20, Number 2-March 20

Taiyo Nippon Sanso will have a booth at "LED Taiwan 2014," to be held at TWTC Nangang Exhibit Hall, Taiwan from March 20 to 23, 2014.

Article about TNSC's MOCVD published in Compound Semiconductor magazine
Faster, better III-N film growth (Page 38) — Compound Semiconductor

High growth rates of AlN and AlGaN on 8" silicon wafer using metal-organic vapor phase epitaxy reactor

Taiyo Nippon Sanso plans to have a booth at SEMICON Taiwan 2013 from September 4 to 6, 2013 at TWTC Nangang Exhibition Hall, Taiwan.

Taiyo Nippon Sanso is planning both a booth and a presentation on the epi-results of its MOCVD systems during the poster session at ICNS-10 (10th International Conference on Nitride Semiconductors) from August 25 to 30, 2013 at Gaylord National Hotel and Convention Center, Washington.
TNSC poster session presentation: August 28, 2013 

Taiyo Nippon Sanso plans to have a booth at TWHM 2013 (10th Topical Workshop on Heterostructure Microelectronics) from September 2 to 5, 2013 at Hakodate Kokusai Hotel.

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.

In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements

Development of RGB monolithic GaInN-based μLED arrays with tunnel junctions

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al_0.72Ga_0.28N channel grown on a single-crystal AlN substrate by metalorganic chemical vapor deposition

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

DC and Pulse I–V Characteristics of Strain-Engineered AlGaInN/GaN HEMTs fabricated on Single-Crystal AlN Substrate

High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE