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Tech Voice
Technical Paper
Mar. 18, 2026
News
Website Relaunch Announcement
Dec. 06, 2025
Tech Voice
Hiroshi Amano – The World of LED
Sep. 24, 2025
News
Corporate Name Change Announcement
Jun. 24, 2025
Events
Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth
May 20, 2025
News
Realization of Controlled n-Type Doping of β-Ga2O3 Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices
Apr. 11, 2025
News
Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
Mar. 31, 2025
News
University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
Mar. 31, 2025
Tech Voice
coming soon
Mar. 31, 2025
Tech Voice
coming soon
Oct. 11, 2024
News
Ohio State University Selects Taiyo Nippon Sanso MOCVD and HVPE Platforms for Research and Development of Advanced Nitride and Oxide Materials and Devices
Sep. 24, 2024
Events
Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply
Jun. 20, 2024
News
Lit Thinking Selects Taiyo Nippon Sanso MOCVD Platform to Enable New UVLED Technologies and Commercial Products
Apr. 22, 2024
News
Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.
Mar. 11, 2024
Events
Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed
Mar. 04, 2024
Events
Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.
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Jan. 19, 2022
News
Taiyo Nippon Sanso and North Carolina State University Agree to Three-Year Collaboration to Enable New GaN Optoelectronic Technologies and Commercial Opportunities
May 21, 2021
News
Sandia National Laboratories Selects Second Taiyo Nippon Sanso SR4000HT MOCVD Platform for Ultra-Wide Bandgap Research and Development
Apr. 01, 2021
News
Successful metalorganic vapor phase epitaxy of β-gallium oxide crystals
— Accelerating the realization of a carbon-free society through next-generation power devices —
Mar. 31, 2021
News
Taiyo Nippon Sanso conducted a presentation at 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021), held online from March 7 (Sun) to 11 (Thu), 2021.
Topic: Optimization of p-type Layer for Improvement of Deep Ultraviolet LEDs on 4-inch Substrates Grown by Using a Large-Scale MOCVD Tool
Dec. 10, 2020
News
Taiyo Nippon Sanso MOCVD equipment division receiving the Industry Award from The Japan Society of Vacuum and Surface Science
Oct. 31, 2020
News
Taiyo Nippon Sanso conducted a presentation at the 39th Electronic Materials Symposium (EMS-39), held online from October 7 (Wed) to 9 (Fri), 2020.
Topic: Epitaxial growth of four-inch AlGaN-based deep ultraviolet LEDs by using a large-scale mass production MOCVD tool
Oct. 20, 2020
News
Information concerning the Taiyo Nippon Sanso CSE LTD group company has been updated.
Oct. 20, 2020
News
National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Accelerate the Spread of Highly Efficient Multi-junction Solar Cells" (Japanese only)
Source: National Institute of Advanced Industrial Science and Technology (AIST)
Aug. 04, 2017
News
CREST orders GaN MOCVD System for HB-LED from TNSC
Jun. 13, 2017
News
National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Fabrication of low cost GaAs solar cells grown by HVPE" (Japanese only)
Source: National Institute of Advanced Industrial Science and Technology (AIST)
Jan. 16, 2017
News
New Energy and Industrial Technology Development Organization (NEDO) entrusted TNSC with a part of the "Development of high performance and reliable PV modules to reduce levelized cost of energy"
Reference: Development of high performance and reliable PV modules to reduce levelized cost of energy (NEDO website, Japanese only)
May 18, 2016
News
Sandia National Laboratories has qualified and accepted commercial MOCVD system SR-4000HT from MATHESON/Taiyo Nippon Sanso Corporation
May 18, 2016
News
Article about TNSC's MOCVD published in Compound Semiconductor magazine, Volume 22, Issue 3, April/May 2016
VENDOR VIEW Driving diversification in GaN device production (Page 22)
Mar. 17, 2016
News
UCSB SSLEEC selects TNSC's SR4000HT MOCVD reactor for deep ultra violet light emitting diode (UVCLED) development.
Dec. 15, 2014
News
TAIYO NIPPON SANSO Corporation's MOCVD system was mentioned in THE GAS REVIEW No. 396 (November 26, 2014 issue) article about the Nobel Prize in Physics.
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Jun. 24, 2025
Events
Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth
Sep. 24, 2024
Events
Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply
Mar. 11, 2024
Events
Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed
Mar. 04, 2024
Events
Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.
Mar. 04, 2024
Events
Taiyo Nippon Sanso will be sponsoring the 7th U.S. Gallium Oxide Workshop (GOX 2024), to be held in Columbus, Ohio, USA from August 5 (Mon) to 7 (Wed), 2024.
Dec. 07, 2023
Events
Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST
Nov. 09, 2023
Events
Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST
Jul. 14, 2023
Events
Taiyo Nippon Sanso will be proud to be a bronze sponsor for the 6th U.S. Workshop on Gallium Oxide (GOX 2023), to be held in Buffalo, New York, USA from Aug 13 (Sun) to 16 (Wed), 2023.
Jun. 08, 2023
Events
Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.
Apr. 17, 2023
Events
Taiyo Nippon Sanso will be sponsoring and conducting a presentation at the 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), to be held in Metz, France from June 5 (Mon) to 8 (Thu), 2023.
Feb. 16, 2023
Events
Taiyo Nippon Sanso will be sponsoring and conducting a presentation at the 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023), to be held in Gifu, Japan from March 5 (Sun) to 9 (Thu), 2023.
Oral Presentation
●Topic: Epitaxial growth for AlGaN-based deep-ultraviolet light-emitting diodes on 6-inch sputter-annealed AlN template by using a mass production MOCVD system
●Date & Time: Mar. 8 (Wed) 10:45-11:00 JST
Feb. 16, 2023
Events
Taiyo Nippon Sanso will be exhibiting at the International Conference on Compound Semiconductor Manufacturing Technology (2023 CS MANTECH), to be held in Orlando, USA from May 15 (Mon) to 18 (Thu), 2023.
Jan. 26, 2023
Events
Taiyo Nippon Sanso will be sponsoring the Ohio State Materials & Manufacturing Conference 2023, to be held in Ohio, USA from May 9 (Tue) to May 11 (Thu), 2023.
Sep. 01, 2022
Events
Taiyo Nippon Sanso will be sponsoring and exhibiting at the International Workshop on Gallium Oxide and Related Materials (IWGO2022) in Nagano, Japan from October 23 (Sun) to 27 (Thu), 2022.
Sep. 01, 2022
Events
Taiyo Nippon Sanso will be sponsoring and exhibiting at the International Workshop on Nitride Semiconductors (IWN2022) in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022.
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Dec. 06, 2025
Tech Voice
Hiroshi Amano – The World of LED
Mar. 31, 2025
Tech Voice
coming soon
Mar. 31, 2025
Tech Voice
coming soon
Feb. 01, 2017
Technical Paper
Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
Jan. 05, 2017
Technical Paper
Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Oct. 07, 2016
Technical Paper
Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient
Oct. 07, 2016
Technical Paper
Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si
Aug. 30, 2016
Technical Paper
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
Aug. 28, 2016
Technical Paper
Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application
Aug. 28, 2016
Technical Paper
High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience
Jul. 10, 2016
Technical Paper
Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE
Jun. 26, 2016
Technical Paper
Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016
Jun. 26, 2016
Technical Paper
Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016
Jun. 17, 2016
Technical Paper
GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016
Mar. 19, 2016
Technical Paper
Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)
Mar. 19, 2016
Technical Paper
Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances
Mar. 06, 2016
Technical Paper
Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016
Oct. 01, 2015
Technical Paper
NEW TYPE MOCVD SYSTEM “SR4000HT”
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