News & Event

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.

Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016

Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016

GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016

Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances

Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)

Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016

Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V) Appl. Phys. Express 7, 041003 (2014)

Industry MOCVD: III-N film growth Compound Semiconductor-Volume 20, Number 2-March 20

High growth rates of AlN and AlGaN on 8" silicon wafer using metal-organic vapor phase epitaxy reactor

Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool Jpn. J. Appl. Phys. 52 (2013) 08JB06

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate Appl. Phys. Express 6 (2013) 026501

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system Journal of Crystal Growth

Control of Thickness and Composition Variation of AlGaN/GaN on 6" and 8" Substrates Using Multiwafer High-Growth-Rate MOCVD Tool Advance copy for IWN 2012 (International Workshop on Nitride Semiconductors)

MOCVD growth of AlN/GaN superlattice barrier with low sheet resistance Advance copy for the 59th Spring Meeting (2012) of the Japan Society of Applied Physics and Related Societies