News & Event

Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool Jpn. J. Appl. Phys. 52 (2013) 08JB06

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate Appl. Phys. Express 6 (2013) 026501

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system Journal of Crystal Growth

Control of Thickness and Composition Variation of AlGaN/GaN on 6" and 8" Substrates Using Multiwafer High-Growth-Rate MOCVD Tool Advance copy for IWN 2012 (International Workshop on Nitride Semiconductors)

MOCVD growth of AlN/GaN superlattice barrier with low sheet resistance Advance copy for the 59th Spring Meeting (2012) of the Japan Society of Applied Physics and Related Societies

High growth rate metal organic vapor phase epitaxy GaN "Journal of Crystal Growth 310(2008)3950-3952)"

Multiwafer atmospheric-pressure MOVPE reactor for nitride semiconductors and ex-situ dry cleaning of reactor components using chlorine gas for stable operation "Phys.Stat.Sol.(c)5,No.9,3017-3019(2008)"

Multi-wafer Atmospheric Pressure MOVPE Reactor for Nitride Semiconductors and ex-situ Dry Cleaning of Reactor Components by Chlorine Gas for Stable Operation Advance copy for the 34th International Symposium on Compound Semiconductors (ISCS2007)

Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases "Journal of Crystal Growth 298 (2007) 433-436"

 GaN growth on 150-mm-diameter (111) Si substrates "Journal of Crystal Growth 298 (2007) 198-201"

Growth and electron transport studies of InAlN/GaN two-dimensional electron gas Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies

Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes J. Appl. Phys. 97, 091101 (2005)

Realization of High Internal Quantum Efficiency over 35% in 330 nm-band deep-UV using Quaternary InAlGaN Quantum Well ICNS-6 Late News

Effects of growth pressure on AlGaNand Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.

In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements

Development of RGB monolithic GaInN-based μLED arrays with tunnel junctions

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al_0.72Ga_0.28N channel grown on a single-crystal AlN substrate by metalorganic chemical vapor deposition

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

DC and Pulse I–V Characteristics of Strain-Engineered AlGaInN/GaN HEMTs fabricated on Single-Crystal AlN Substrate

High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE