News

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

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Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Sandia National Laboratories Orders Commercial Grade GaN-MOCVD System from Matheson/Taiyo Nippon Sanso

TNSC Announces Technical Agreement with ITRI
TNSC, a manufacturer of metal organic chemical vapor deposition (MOCVD) systems, has signed a technical agreement with Taiwan-based ITRI, which is known for its world-class technologies for optoelectronic devices. The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary advanced technology of Taiyo Nippon Sanso. ITRI recognizes that the TNSC AP-MOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN thanks to high quality. Potentially, ITRI and TNSC can develop a higher performance UVA LED on a native GaN substrate at a reasonable price than on a conventional sapphire substrate, because it can inject more current into an LED on a native GaN substrate due to low dislocation density and easy current spreading. The near-ideal point light source will improve the utilization efficiency of UV light with simple optics. ITRI and TNSC hope that the partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.

Article about TNSC's MOCVD published in Compound Semiconductor magazine
Faster, better III-N film growth (Page 38) — Compound Semiconductor

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring and conducting a presentation at the 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023), to be held in Gifu, Japan from March 5 (Sun) to 9 (Thu), 2023.
Oral Presentation
●Topic: Epitaxial growth for AlGaN-based deep-ultraviolet light-emitting diodes on 6-inch sputter-annealed AlN template by using a mass production MOCVD system
●Date & Time: Mar. 8 (Wed) 10:45-11:00 JST

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Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE

Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016

Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016

GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016

Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances

Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)

Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016

Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)