Apr. 16, 2014
News
TNSC Announces Technical Agreement with ITRI
TNSC, a manufacturer of metal organic chemical vapor deposition (MOCVD) systems, has signed a technical agreement with Taiwan-based ITRI, which is known for its world-class technologies for optoelectronic devices. The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary advanced technology of Taiyo Nippon Sanso. ITRI recognizes that the TNSC AP-MOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN thanks to high quality. Potentially, ITRI and TNSC can develop a higher performance UVA LED on a native GaN substrate at a reasonable price than on a conventional sapphire substrate, because it can inject more current into an LED on a native GaN substrate due to low dislocation density and easy current spreading. The near-ideal point light source will improve the utilization efficiency of UV light with simple optics. ITRI and TNSC hope that the partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.