News

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

coming soon

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is planning to give two presentations during the poster session at the International Workshop on Nitride Semiconductors (IWN) 2016 and Matheson TRI-Gas/Taiyo Nippon Sanso will also have an exhibit booth from October 2 (Sun) to 6 (Thu), 2016 at the Hilton Orlando Lake Buena Vista in Orlando, Florida USA.
Also, Sandia National Laboratories will give an oral presentation about a paper called ""Low Etch Pit Density AlN on Sapphire"" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster Presentation
●Session: PS1.27 at Grand Ballroom
●Topic: Regrowth of High‐Al‐Content AlGaN and AlN on High‐Quality AlN Template Fabricated by Annealing at 1700C under Nitrogen Ambient
●Date & Time: Oct. 3 (Mon), 2016 6:30PM-8:30PM
●Session: PS2.122 at Grand Ballroom
●Topic: Impact of Crystal Quality of AlN Nucleation Layer on the Vertical Direction Breakdown Voltage of AlGaN/GaN High-Electron-Mobility Transistor Structures on Si
●Date & Time: Oct. 6 (Thu), 2016 9:45AM-10:45AM
Sandia National Laboratories Oral Presentation
●Session: A2.7.05 Epitaxial Growth VII: Epitaxial Growth of (Al,Ga)N at International South
●Topic: Low Etch Pit Density AlN on Sapphire
●Date & Time: Oct. 6 (Thu), 2016 9:1

Taiyo Nippon Sanso is planning two presentations at the European Materials Reserch Society (E-MRS) 2016 Fall Meeting from September 19 (Mon) to 22 (Thu), 2016 at the Warsaw University of Technology in Warsaw, Porland.
Oral Presentation
●Session: G.2.1
●Topic: Challenges to GaN MOCVD: High Growth rate and High Purity
●Date & Time: Sep 19 (Mon), 2016 11:00AM Poster Presentation
●Session: F.P.1.13
●Topic: Characterization of AlN and AlxGa1-xN (x > 0.5) films regrown by high-temperature MOCVD on N2-annealed AlN template
●Date & Time: Sep 19 (Mon), 2016 5:45PM

Taiyo Nippon Sanso is planning three presentation during the poster session at the 77th JSAP Autumn Meeting 2016 from September 13 (Tue) to 16 (Fri), 2016 at the Toki Messe in Nigata, Japan.
Poster Presentation
●Session: 14a-P6-15
●Topic: The influence of number of strained-layer super-lattice (SLS) periods in vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor on Si substrates
●Date & Time: Sep. 14 (Wed), 2016 9:30AM-11:30AM
●Session: 16a-P5-18
●Topic: Regrowth of AlGaN (Al > 0.5) and AlN on AlN Template Processed by High temperature Annealing at Nitrogen Atmosphere
●Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM
●Session: 16a-P5-19
●Topic: Control of C and Si Doping in Low Si-doped GaN Using Multiwafer MOCVD Tool
●Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM

Taiyo Nippon Sanso is planning to give a presentation at the International Workshop on UV Materials and Devices (IWUMD-2016) which will be held in the School of Physics, Peking University.

Taiyo Nippon Sanso is planning two presentations during the poster session at the 2016 Compound Semiconductor Week (CSW2016) and will also have an exhibit (Booth #6) from June 26 to 30 at the Toyama International Conference Center, Toyama, Japan.

Taiyo Nippon Sanso is planning to give a presentation during the poster session at the 18th International Conference on Metal Organic Vapor Phase Epitaxy and will also have an exhibit (Booth #18) from July 10 to 15 at the Sheraton San Diego Hotel & Marina. Also, Sandia National Laboratories will give an oral presentation about a paper called "Growth Evolution of AlN on Sapphire at High Temperature" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster presentation
●Session: PS-1
●Topic: Characterization of AlN and Mg-Doped AlxGa1-xN (x>0.2) Grown by Using Horizontal High-Flow-Rate MOVPE System
●Date & Time: Jul. 12, 4:00PM-6:00PM Sandia National Laboratories Oral presentation
●Session: 1D-1 AlN Heteroepitaxy at Grande Ballroom C
●Topic: Growth Evolution of AlN on Sapphire at High Temperature
●Date & Time: Jul. 11, 4:00PM

Taiyo Nippon Sanso is planning a presentation during the poster session at the 2016 MRS Spring Meeting & Exhibit from March 28 to April 1 at the Phoenix Convention Center.
The topic will be “Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer.” 

Taiyo Nippon Sanso is planning a presentation during the ISPlasma symposium from March 6 to 10, 2016 at Nagoya University.
The topic will be “Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates.”

Taiyo Nippon Sanso is planning a presentation during the oral cession IEICE Technical Committee from November 26 to 27, 2015 at Osaka City University Media center in Osaka, Japan.
Topic will be "Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate" 

Taiyo Nippon Sanso is planning a presentation at The 6th International Symposium on Growth of Ⅲ-Nitrides from November 8 to 13, 2015 at Act City Hamamatsu in Hamamatsu, Japan.
Topic of the poster session will be "Si-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-speed-flow MOVPE reactor"
Topic of the keynote lecture will be "Opportunities and Challenges to GaN MOCVD for Electron Devices" 

Taiyo Nippon Sanso is planning a presentation during the oral session at The 9th International Workshop on Bulk Nitride Semiconductors from November 2 to 6, 2015 at Oak Valley in Wonju, South Korea.
Topic will be "Low C and Si residual concentration of GaN grown on GaN Substrates by MOCVD" 

Taiyo Nippon Sanso plans to have a booth at the Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP) from August 20 to 21, 2015 at Hilton Fukuoka Sea Hawk in Fukuoka, Japan.

coming soon

Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE

Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016

Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016

GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016

Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances

Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)

Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016

Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)