News

Taiyo Nippon Sanso is planning a presentation during the poster session at the 4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV) from September 8 (Sun) to 13 (Fri), 2019 at Hotel Holiday Inn St Petersburg, Saint Petersburg, Russia.
Poster Presentation
●Session: We-13p
●Topic: Performance Improvement of Deep Ultraviolet Light Emitting Diode by Optimization of Electron Block Layer Thickness and Mg Concentration in p-GaN Contact Layer
●Date & Time: Sep. 11 (Wed) 18:00-19:30

The National Institute of Advanced Industrial Science and Technology (AIST) is planning a presentation (co-authored with Taiyo Nippon Sanso) and Taiyo Nippon Sanso will have an exhibit booth at the 51st International Conference on Solid State Device and Materials (SSDM) from September 2 (Mon) to 5 (Thu), 2019 at Nagoya University, Nagoya, Aichi, Japan.
Oral Presentation
●Session: C-5-1 (Area: 06: Photovoltaic/Energy Harvesting/Battery-related Technology)
●Topic: Recent progress on HVPE-grown III-V solar cells with extremely high growth rates
●Date: Sep. 5 (Thu)

Taiyo Nippon Sanso is planning a presentation during the poster session at IWN 2018 from November 11 (Sun) to 16 (Fri), 2018 at ANA Crown Plaza Kanazawa, Japan.
Poster Presentation
●Session: Poster Session 3
●Topic: High Temperature Annealing of AlN on 6-inch Sapphire by Annealing Furnace Capable of Processing Multiple Substrates
●Date: Nov. 15 (Thu)

Taiyo Nippon Sanso is planning six presentations at the 79th JSAP Autumn Meeting 2018 from September 18 (Tue) to 21 (Fri), 2018 at the Nagoya Congress Center in Nagoya, Japan.
Oral Presentation
●Session: 15.4 III-V-group nitride crystals
●Topic: [21p-146-3] High temperature growth of N-polar GaN by THVPE
●Date & Time: Sept. 21 (Fri) 14:00-14:15
●Presentation Room: 146 (Reception Hall)
●Session: 13.9 Compound solar cells
●Topic: [20p-136-8] Evaluation on hetero-interfaces properties in GaAs solar cells grown by HVPE
●Date & Time: Sept. 20 (Thu) 15:15-15:30
●Presentation Room: 136 (3F_Lobby)
●Session: 13.9 Compound solar cells
●Topic: [20p-136-5] High speed growth of InGaP solar cells fabricated by hydride vapor phase epitaxy
●Date & Time: Sept. 20 (Thu) 14:30-14:45
●Presentation Room: 136 (3F_Lobby)
●Session: 15.4 III-V-group nitride crystals
●Topic: [19a-146-10] Analysis of efficiency curves of green emitting InGaN-based multiple quantum wells using rate equation for radiative and nonradiative recombination of excitons
●Date & Time: Sept. 19 (Wed) 11:30-11:45
●Presentation Room: 146 (Reception Hall)
●Session: 13.7 Compound and power electron devices and process technology
●Topic: [20a-331-8] Distribution of Net Donor Concentration in Low-doped N-type GaN Grown on 4-inch Sapphire substrates by Multi-wafer MOVPE Reactor
●Date & Time: Sept. 20 (Thu) 11:00-11:15
●Presentation Room: 331 (International Conference Room)
●Session: 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
●Topic: [18p-234B-1] Low temperature photoluminescence of GaAs grown at extremely high rate
●Date & Time: Sept. 18 (Tue) 13:15-13:30
●Presentation Room: 234B (234-2)

Taiyo Nippon Sanso is planning a presentation at SPIE Photonics West 2018 from January 27 (Sun) to February 1 (Thu), 2018 at the Moscone Center, San Francisco, CA, USA.
Oral Presentation
●Session: Growth I/10532-3
●Topic: Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere
●Date & Time: Jan. 29 (Mon), 2018 11:10AM-11:30AM

Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the International Workshop on UV Materials and Devices 2017 (IWUMD 2017) from November 14 (Tue) to 18 (Sun), 2017 at Kyushu University, Fukuoka, Japan.
Poster Presentation
●Session: Th-P42
●Topic: Luminescence characteristics of Si-doped high Al composition AlGaN Multi-quantum-well grown by metal organic chemical vaper deposition
●Date & Time: Nov. 15 (Thu), 2017 12:45PM-2:45PM Tokyo University of Agriculture and Technology is also planning a presentation (co-Authored with Taiyo Nippon Sanso). Poster Presentation
●Session: We-P51
●Topic: High temperature growth of GaN by THVPE method
●Date & Time: Nov. 15 (Wed), 2017 12:30PM-2:30PM

The National Institute of Advanced Industrial Science and Technology (AIST) is planning a presentation (co-authored with Taiyo Nippon Sanso) at the 27th International Photovoltaic Science and Engineering Conference (PVSEC 2017) from November 12 (Sun) to 17 (Fri), 2017 at Lake Biwa Otsu Prince Hotel, Otsu, Shiga, Japan.
Oral Presentation
●Session: 3Tu5.4
●Topic: Fabrication of GaAs solar cells grown with InGaP window layers by Hydride Vapor Phase Epitaxy
●Date & Time: Nov. 14 (Tue), 2017 2:30PM-2:45PM
●Place: Room 3

Taiyo Nippon Sanso is planning a presentation at the 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) from October 8 (Sun) to 12 (Thu), 2017 at the Banff Centre, Banff, Alberta, Canada.
Poster Presentation
●Session: TP24
●Topic: Characterization of AlN Layer on 4 Inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
●Date & Time: Oct. 10 (Tue), 2017 4:00PM-6:00PM

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring and conducting a presentation at the 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023), to be held in Gifu, Japan from March 5 (Sun) to 9 (Thu), 2023.
Oral Presentation
●Topic: Epitaxial growth for AlGaN-based deep-ultraviolet light-emitting diodes on 6-inch sputter-annealed AlN template by using a mass production MOCVD system
●Date & Time: Mar. 8 (Wed) 10:45-11:00 JST

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