Technology

Nippon Sanso CSE Division, together with our affiliated research institutions, is advancing world-class research and development based on MOCVD/MOVPE technologies—ranging from compound semiconductor epitaxy to foundational device technologies.
While Nippon Sanso is widely known as a supplier of specialty gases, our contribution extends far beyond gas supply.

We are a technology innovator that drives the evolution of epitaxial growth processes, the core of semiconductor manufacturing.
By collaborating with universities, research institutes, and group companies, we are creating the fundamental technologies that will support the next generation of electronics.

Here, we highlight some of our latest research achievements.
For detailed data, growth mechanism analyses, and process optimization studies, please refer to the individual publications.

Technical Update

  • Mar. 25, 2025
    Technical Update
    In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements
  • Mar. 19, 2025
    Technical Update
    Development of RGB monolithic GaInN-based μLED arrays with tunnel junctions
  • Nov. 01, 2024
    Technical Update
    AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on a single-crystal AlN substrate by metalorganic chemical vapor deposition
  • Apr. 24, 2024
    Technical Update
    Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
  • Aug. 17, 2023
    Technical Update
    RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

View more

Product inquiries and consultations

Please feel free to contact us for product information or a quote.