Technology

CSE Division, together with our affiliated research institutions, is advancing world-class research and development based on MOCVD/MOVPE technologies—ranging from compound semiconductor epitaxy to foundational device technologies.
We are not merely a gas supplier.

We are a technology innovator that drives the evolution of epitaxial growth processes, the core of semiconductor manufacturing.
By collaborating with universities, research institutes, and group companies, we are creating the fundamental technologies that will support the next generation of electronics.

Here, we highlight some of our latest research achievements.
For detailed data, growth mechanism analyses, and process optimization studies, please refer to the individual publications.

Technical Paper

  • Feb. 01, 2017
    Technical Paper
    Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
  • Jan. 05, 2017
    Technical Paper
    Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
  • Oct. 07, 2016
    Technical Paper
    Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si
  • Oct. 07, 2016
    Technical Paper
    Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient
  • Aug. 30, 2016
    Technical Paper
    Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

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