SR4000HT Series

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Wide Process Window MOCVD for Power and Optoelectronic Devices

The SR4000HT Series is an MOCVD system for GaN research and development. It has a wide range of growth conditions and can be customized to accommodate low vapor pressure raw materials.

SR4000HT Series 

Wide Process Window MOCVD for Power and Optoelectronic Devices Img

Advantages

  • High Growth Rates
  • Carbon Background Concentration Control and Flexibility
  • High InGaN Growth Temperature
  • High temperature controllability and uniformity
  • High Al Content AlGaN

Applications

HEMT, PN Diodes, Lasers, RGB to UV LED

SR4000HT Series specifications

SR4000HT SR4000HT-RR
Reactor type Face up, Horizontal flow with rotation
Wafer size 2"×3 or 4"×1
Heating system Two zone, up to 1350℃
Gas nozzles Three (3) laminar flow horizontals
(Triple injection)
Growth pressure 10 to 100 kPa
Size L6200, W1200, H2200 mm L4090, W1280, H2150 mm
Four (4) cabinets Three (3) cabinets
Sources Eight (8) metalorganic lines
Two (2) hydride lines

Introduction movie

SR4000HT

SR4000HT-RR

2"×3 susceptor

Product Lineup

GaN

GaAs/InP

Ga2O3

Product inquiries and consultations

Please feel free to contact us for product information or a quote.

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