News

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

coming soon

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is planning a presentation at SPIE Photonics West 2018 from January 27 (Sun) to February 1 (Thu), 2018 at the Moscone Center, San Francisco, CA, USA.
Oral Presentation
●Session: Growth I/10532-3
●Topic: Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere
●Date & Time: Jan. 29 (Mon), 2018 11:10AM-11:30AM

The National Institute of Advanced Industrial Science and Technology (AIST) is planning a presentation (co-authored with Taiyo Nippon Sanso) at the 27th International Photovoltaic Science and Engineering Conference (PVSEC 2017) from November 12 (Sun) to 17 (Fri), 2017 at Lake Biwa Otsu Prince Hotel, Otsu, Shiga, Japan.
Oral Presentation
●Session: 3Tu5.4
●Topic: Fabrication of GaAs solar cells grown with InGaP window layers by Hydride Vapor Phase Epitaxy
●Date & Time: Nov. 14 (Tue), 2017 2:30PM-2:45PM
●Place: Room 3

Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the International Workshop on UV Materials and Devices 2017 (IWUMD 2017) from November 14 (Tue) to 18 (Sun), 2017 at Kyushu University, Fukuoka, Japan.
Poster Presentation
●Session: Th-P42
●Topic: Luminescence characteristics of Si-doped high Al composition AlGaN Multi-quantum-well grown by metal organic chemical vaper deposition
●Date & Time: Nov. 15 (Thu), 2017 12:45PM-2:45PM Tokyo University of Agriculture and Technology is also planning a presentation (co-Authored with Taiyo Nippon Sanso). Poster Presentation
●Session: We-P51
●Topic: High temperature growth of GaN by THVPE method
●Date & Time: Nov. 15 (Wed), 2017 12:30PM-2:30PM

Taiyo Nippon Sanso is planning a presentation at the 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) from October 8 (Sun) to 12 (Thu), 2017 at the Banff Centre, Banff, Alberta, Canada.
Poster Presentation
●Session: TP24
●Topic: Characterization of AlN Layer on 4 Inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
●Date & Time: Oct. 10 (Tue), 2017 4:00PM-6:00PM

Taiyo Nippon Sanso is planning a presentation at the 10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X) from September 18 (Mon) to 22 (Fri), 2017 at Hotel Nuuksio, Espoo, Finland.

Taiyo Nippon Sanso is planning a presentation at the 78th JSAP Autumn Meeting 2017 (JSAP Autumn 2017) from September 5 (Tue) to 8 (Fri), 2017 at Fukuoka International Congress Center, Fukuoka, Japan.

Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth with Matheson TRI-Gas at the 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) from July 30 (Sun) to August 4 (Fri), 2017 at Eldorado Hotel and Spa, Santa Fe, NM, USA.
Presentation Topic
●Properties of GaN on high quality AlN sapphire template by using metalorganic chemical vapor deposition

Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the 12th International Conference on Nitride Semiconductors (ICNS-12) from July 24 (Mon) to 28 (Fri), 2017 at Strasbourg Convention Center, Strasbourg, France.
Presentation Topic
●Characteristics of AlN layer on 4-inch sapphire substrate by high temperature annealing in nitrogen atmosphere

The National Institute of Advanced Industrial Science and Technology (AIST) and Taiyo Nippon Sanso are planning two presentations at the 44th Photovoltaic Specialists Conference (PVSC 2017) from June 25 (Sun) to 30 (Fri), 2017 at the Washington Marriott Wardman Park, Washington D.C., USA.
Presentation Topic
●Characterization of GaAs solar cells grown by hydride vapor phase epitaxy in a horizontal reactor
●Extremely high-speed GaAs growth by MOVPE for low cost PV application

Taiyo Nippon Sanso is planning a presentation at the 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17) from April 19 (Wed) to 21 (Fri), 2017 at Pacifico Yokohama, Yokohama, Japan.

Taiyo Nippon Sanso is planning to give two presentations during the poster session at the International Workshop on Nitride Semiconductors (IWN) 2016 and Matheson TRI-Gas/Taiyo Nippon Sanso will also have an exhibit booth from October 2 (Sun) to 6 (Thu), 2016 at the Hilton Orlando Lake Buena Vista in Orlando, Florida USA.
Also, Sandia National Laboratories will give an oral presentation about a paper called ""Low Etch Pit Density AlN on Sapphire"" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster Presentation
●Session: PS1.27 at Grand Ballroom
●Topic: Regrowth of High‐Al‐Content AlGaN and AlN on High‐Quality AlN Template Fabricated by Annealing at 1700C under Nitrogen Ambient
●Date & Time: Oct. 3 (Mon), 2016 6:30PM-8:30PM
●Session: PS2.122 at Grand Ballroom
●Topic: Impact of Crystal Quality of AlN Nucleation Layer on the Vertical Direction Breakdown Voltage of AlGaN/GaN High-Electron-Mobility Transistor Structures on Si
●Date & Time: Oct. 6 (Thu), 2016 9:45AM-10:45AM
Sandia National Laboratories Oral Presentation
●Session: A2.7.05 Epitaxial Growth VII: Epitaxial Growth of (Al,Ga)N at International South
●Topic: Low Etch Pit Density AlN on Sapphire
●Date & Time: Oct. 6 (Thu), 2016 9:1

coming soon

Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE

Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016

Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016

GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016

Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances

Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)

Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016

Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)