News

Taiyo Nippon Sanso is planning two presentations during the poster session at the 2016 Compound Semiconductor Week (CSW2016) and will also have an exhibit (Booth #6) from June 26 to 30 at the Toyama International Conference Center, Toyama, Japan.

Taiyo Nippon Sanso is planning to give a presentation during the poster session at the 18th International Conference on Metal Organic Vapor Phase Epitaxy and will also have an exhibit (Booth #18) from July 10 to 15 at the Sheraton San Diego Hotel & Marina. Also, Sandia National Laboratories will give an oral presentation about a paper called "Growth Evolution of AlN on Sapphire at High Temperature" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster presentation
●Session: PS-1
●Topic: Characterization of AlN and Mg-Doped AlxGa1-xN (x>0.2) Grown by Using Horizontal High-Flow-Rate MOVPE System
●Date & Time: Jul. 12, 4:00PM-6:00PM Sandia National Laboratories Oral presentation
●Session: 1D-1 AlN Heteroepitaxy at Grande Ballroom C
●Topic: Growth Evolution of AlN on Sapphire at High Temperature
●Date & Time: Jul. 11, 4:00PM

Article about TNSC's MOCVD published in Compound Semiconductor magazine, Volume 22, Issue 3, April/May 2016
VENDOR VIEW Driving diversification in GaN device production (Page 22) 

Sandia National Laboratories has qualified and accepted commercial MOCVD system SR-4000HT from MATHESON/Taiyo Nippon Sanso Corporation

Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances

Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)

UCSB SSLEEC selects TNSC's SR4000HT MOCVD reactor for deep ultra violet light emitting diode (UVCLED) development.

Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016

Taiyo Nippon Sanso is planning a presentation during the poster session at the 2016 MRS Spring Meeting & Exhibit from March 28 to April 1 at the Phoenix Convention Center.
The topic will be “Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer.” 

Taiyo Nippon Sanso is planning a presentation during the ISPlasma symposium from March 6 to 10, 2016 at Nagoya University.
The topic will be “Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates.”

Taiyo Nippon Sanso is planning a presentation during the oral cession IEICE Technical Committee from November 26 to 27, 2015 at Osaka City University Media center in Osaka, Japan.
Topic will be "Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate" 

Taiyo Nippon Sanso is planning a presentation at The 6th International Symposium on Growth of Ⅲ-Nitrides from November 8 to 13, 2015 at Act City Hamamatsu in Hamamatsu, Japan.
Topic of the poster session will be "Si-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-speed-flow MOVPE reactor"
Topic of the keynote lecture will be "Opportunities and Challenges to GaN MOCVD for Electron Devices" 

Taiyo Nippon Sanso is planning a presentation during the oral session at The 9th International Workshop on Bulk Nitride Semiconductors from November 2 to 6, 2015 at Oak Valley in Wonju, South Korea.
Topic will be "Low C and Si residual concentration of GaN grown on GaN Substrates by MOCVD" 

Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth

Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply

Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed

Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.

Taiyo Nippon Sanso will be giving a presentation at the SPIE Photonics West, to be held in San Francisco, California, USA from January 27 (Sat) to February 1 (Thu), 2024.
Oral Presentation
●Topic: Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD (Invited Paper)
●Date & Time: Feb. 1 (Thu) 11:30AM-12:00PM PST

Taiyo Nippon Sanso will be presenting a poster at and sponsoring the 14th International Conference on Nitride Semiconductors (ICNS-14), to be held in Fukuoka, Japan from November 12 (Sun) to 17 (Fri), 2023.
Poster Presentation
●Topic: Development of a MOCVD system with an integrated cleaning system and improved efficiency for the mass production of GaN epi-wafers
●Date & Time: Nov. 16 (Thu) 16:20-18:10 JST

Taiyo Nippon Sanso will be sponsoring the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23) and the 21st US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-21), to be held in Tucson, Arizona, USA from Aug 13 (Sun) to 18 (Fri), 2023.

coming soon

Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si

Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience

Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application

Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE

Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016

Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016

GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016

Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances

Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)

Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016

Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)