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Tech Voice
Technical Paper
Mar. 18, 2026
News
Website Relaunch Announcement
Dec. 06, 2025
Tech Voice
Hiroshi Amano – The World of LED
Sep. 24, 2025
News
Corporate Name Change Announcement
Jun. 24, 2025
Events
Taiyo Nippon Sanso is Proud to Sponsor the 15th International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden from July 6 (Sun) to 11 (Fri), 2025.
Oral Presentation
●Booth No.: 20
●Topic: Advanced High-Flow-Velocity Horizontal MOCVD Technology for Nitride Semiconductor Growth
May 20, 2025
News
Realization of Controlled n-Type Doping of β-Ga2O3 Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices
Apr. 11, 2025
News
Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
Mar. 31, 2025
News
University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
Mar. 31, 2025
Tech Voice
coming soon
Mar. 31, 2025
Tech Voice
coming soon
Oct. 11, 2024
News
Ohio State University Selects Taiyo Nippon Sanso MOCVD and HVPE Platforms for Research and Development of Advanced Nitride and Oxide Materials and Devices
Sep. 24, 2024
Events
Taiyo Nippon Sanso will be sponsoring (at Gold Level), exhibiting and holding presentations at the International Workshop on Nitride Semiconductors (IWN 2024), on the island of O'ahu, Hawai'i, USA from November 3 (Sun) to 8 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic-1: Demonstration of MOCVD System with Advanced Mass Production Performance
●Topic-2: Demonstration of AlScN Growth Using Commercial-Grade MOCVD Equipment Compatible with Low Vapor Pressure Precursor Supply
Jun. 20, 2024
News
Lit Thinking Selects Taiyo Nippon Sanso MOCVD Platform to Enable New UVLED Technologies and Commercial Products
Apr. 22, 2024
News
Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.
Mar. 11, 2024
Events
Taiyo Nippon Sanso will be sponsoring (Platinum Level), exhibiting and holding presentations at the International Workshop on Gallium Oxide and Related Materials (IWGO), in Berlin, Germany from May 26 (Sun) to 31 (Fri), 2024.
Oral Presentation
●Booth No.: Not Fixed
●Topic: Growth of Si-doped β-Ga2O3 thick layers by low-pressure hot-wall MOVPE using tetramethylsilane as a doping gas
●Date & Time: Not fixed
Mar. 04, 2024
Events
Taiyo Nippon Sanso will be sponsoring, exhibiting and holding presentations at the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), in Las Vegas, Nevada, USA from May 12 (Sun) to 17 (Fri), 2024.
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Mar. 18, 2026
News
Website Relaunch Announcement
Sep. 24, 2025
News
Corporate Name Change Announcement
May 20, 2025
News
Realization of Controlled n-Type Doping of β-Ga2O3 Homoepitaxial Layers via a Proprietary MOVPE
Key Technology for Mass-Production of Next-Generation Power Devices
Apr. 11, 2025
News
Lund University Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Oxide Materials and Devices
Mar. 31, 2025
News
University of South Carolina Selects Taiyo Nippon Sanso MOCVD Platform for Research and Development of Advanced Nitride Materials and Devices
Oct. 11, 2024
News
Ohio State University Selects Taiyo Nippon Sanso MOCVD and HVPE Platforms for Research and Development of Advanced Nitride and Oxide Materials and Devices
Jun. 20, 2024
News
Lit Thinking Selects Taiyo Nippon Sanso MOCVD Platform to Enable New UVLED Technologies and Commercial Products
Apr. 22, 2024
News
Innovation Unit, CSE Department will move from Shiba Office to Minatomirai Office. Business will resume on May 1.
Jun. 30, 2023
News
Production Efficiency Improved by 2X Compared to Conventional Systems, Announcement of the Release of the UR26K-CCD for Mass Production GaN MOCVD Systems
Feb. 07, 2023
News
Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)
Oct. 31, 2022
News
Taiyo Nippon Sanso conducted a presentation at the 41st Electronic Materials Symposium (EMS-41), held in Nara, Japan from October 19 (Wed) to 21 (Fri), 2022.
Topic: In-plane uniformity control of Al composition and thickness for AlGaN-based Far-UVC LEDs growth
Sep. 26, 2022
News
Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.
Jun. 29, 2022
News
We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.
Apr. 20, 2022
News
Taiyo Nippon Sanso Ga2O3 MOCVD System Installed and Qualified for Operation at Tokyo University of Agriculture and Technology
Apr. 07, 2022
News
Taiyo Nippon Sanso and RIKEN demonstrate MOCVD AlGaN-based deep ultraviolet LED EL emission at 226nm
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Aug. 26, 2022
Events
Taiyo Nippon Sanso will be sponsoring the 9th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2022) from November 7 (Mon) to 9 (Wed), 2022.
Jul. 27, 2022
Events
Taiyo Nippon Sanso will be sponsoring the 5th U.S. Gallium Oxide Workshop (GOX 2022) in Washington, D.C., USA from August 7 (Sun) to 10 (Wed), 2022.
Apr. 12, 2022
Events
Taiyo Nippon Sanso and Notre Dame University, USA, will give a presentation on Vertical GaN PN Diodes at the 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). The VLSI-TSA will be held in hybrid form, from April 18 (Mon) to April 21 (Thu), 2022 at the Ambassador Hotel Hsinchu, Taiwan, and from April 25 (Mon) to May 24 (Tue), 2022 as a virtual symposium.
Mar. 25, 2022
Events
Taiyo Nippon Sanso will be sponsoring the MRS Webinar on Ultrawide Bandgap Materials and Devices, to be held online on March 31 (Thu), 2022.
Sep. 29, 2021
Events
Taiyo Nippon Sanso is sponsoring the Nitride Materials-Synthesis, Characterization and Modeling Symposium (EQ13) at the 2021 Fall MRS Meeting and Exhibit, to be held in Boston, USA from November 29 (Mon) to December 2 (Thu), 2021 and to be held online from December 6 (Mon) to 8 (Wed), 2021.
Aug. 31, 2021
Events
Taiyo Nippon Sanso will give a presentation on the subject of “Preliminary growth and uniformity of high Al composition AlGaN-based DUV-LEDs targeting wavelengths around 230nm” at the 40th Electronic Materials Symposium, to be held online from October 11 (Mon) to 13 (Wed), 2021.
Aug. 24, 2021
Events
Taiyo Nippon Sanso is sponsoring the Gallium Nitride and Silicon Carbide Power Technology Symposium (H03) at the 240th Electrochemical Society (ECS) Meeting, to be held online from October 10 (Sun) to 14 (Thu), 2021.
May 18, 2021
Events
Taiyo Nippon Sanso will be exhibiting at the 63rd Electronic Materials Conference (EMC 2021) held online from June 23 (Wed) to 25 (Fri), 2021.
May 18, 2021
Events
Taiyo Nippon Sanso will be exhibiting at the ARPA-E Energy Innovation Summit held online from May 24 (Mon) to 27 (Thu), 2021.
Apr. 15, 2021
Events
Taiyo Nippon Sanso will be lending support as well as exhibiting during Compound Semiconductor Week (CSW-2021) held online from May 9 (Sun) to 13 (Thu), 2021.
Apr. 15, 2021
Events
Taiyo Nippon Sanso will be exhibiting at the International Conference on UV LED Technologies and Applications (ICULTA 2021) on April 19 (Mon) and 20 (Tue), 2021.
Mar. 10, 2021
Events
Taiyo Nippon Sanso is sponsoring the 2021 MRS Spring Meeting - Symposium EL04 - Ultrawide Bandgap Materials, Devices and Systems from April 17 (Sat) to 23 (Fri), 2021.
Oct. 12, 2020
Events
Taiyo Nippon Sanso is sponsoring webinars on Material Research Society (MRS) Global Diversity Awareness Month in October 2020.
Webinars
Topic:
Banish Imposter Syndrome for Good! Strategies and Tactics for Dealing with Self-Doubt
Date & Time: Oct. 13 (Tue) 12:00PM ET
Topic:
Understanding Unconscious Bias
Date & Time: Oct. 23 (Fri) 1:00PM ET
Topic:
Intersections of Underrepresentation in Materials Science and Engineering
Date & Time: Oct. 29 (Thu) 1:00PM ET
Aug. 31, 2020
Events
Taiyo Nippon Sanso is sponsoring a webinar in the Materials Research Society (MRS) professional development webinar series on September 9 (Wed), 2020.
Jun. 03, 2020
Events
Taiyo Nippon Sanso is sponsoring the 8th IEEE Workshop on Wide Bandgap Power Devices and Applications 2020 from October 25 (Sun) to 27 (Tue), 2020 at Crown Plaza Redondo Beach and Marina, Redondo Beach, CA, USA.
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Dec. 06, 2025
Tech Voice
Hiroshi Amano – The World of LED
Mar. 31, 2025
Tech Voice
coming soon
Mar. 31, 2025
Tech Voice
coming soon
Feb. 01, 2017
Technical Paper
Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere
Jan. 05, 2017
Technical Paper
Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Oct. 07, 2016
Technical Paper
Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient
Oct. 07, 2016
Technical Paper
Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si
Aug. 30, 2016
Technical Paper
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
Aug. 28, 2016
Technical Paper
Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application
Aug. 28, 2016
Technical Paper
High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience
Jul. 10, 2016
Technical Paper
Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System 2016 ICMOVPE
Jun. 26, 2016
Technical Paper
Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures CSW 2016
Jun. 26, 2016
Technical Paper
Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System CSW 2016
Jun. 17, 2016
Technical Paper
GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO IWUMD 2016
Mar. 19, 2016
Technical Paper
Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer MRS2016 spring meeting (Poster Session)
Mar. 19, 2016
Technical Paper
Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates MRS Advances
Mar. 06, 2016
Technical Paper
Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates Isplasma 2016
Oct. 01, 2015
Technical Paper
NEW TYPE MOCVD SYSTEM “SR4000HT”
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