UR26K-CCD

Expanding the Horizon for Gallium Nitride Mass Production

The UR26K is a high-throughput MOCVD system for 150/200mm GaN device massproduction.

UR26K-CCD

Wide Process Window MOCVD for Power and Optoelectronic Devices Img

Advantages

Higher yield performance with fully automated cassette-to-cassette wafer transfer system
Higher reproducibility and lower cost of ownership with integrated ex situ cleaning system for reactor components
High epi-controllability with horizontal tri-laminar flow nozzle and stable gear driven susceptor rotation and wafer revolution
Sequence programming and data logging functions optimized for mass production

Applications

Power, high frequency, and micro-LED devices

UR25K Specifications

Reactor type	Face up, rotation & revolution
Wafer size	6” x 10 or 8” x 6
Heating system	6 zone resistance heaters
Sourcses	TMGa, TEGa, TMAl, TMIn, NH³
Sourcses	Cp²Mg, SiH4
Gas nozzles	Three laminar flow horizontals
Growth pressure	13 to 100 kPa

※Cassette-to-Cassette System
Fully automated cassette-to-cassette (CtoC) wafer loading increases throughput, reduces contamination from wafer handling, and increases overall product yield

※Integrated Dry Cleaning System
Maximizes the productivity of the MOCVD chamber by cleaning reactor parts ex situ in parallel with MOCVD processing

8"×6 Reactor

UR26K-CCD

Expanding the Horizon for Gallium Nitride Mass Production

Advantages

Applications

UR25K Specifications

Product Lineup

GaN

GaAs

Ga2O3

Product inquiries and consultations