FR2000-OX

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Enabling the Future of Oxide Semiconductors

The FR2000OX is an MOCVD system for research and development of gallium oxide. It features a hot wall heating system.

FR2000-OX

FR2000-OX Img

Advantages

  • A horizontal three-layer laminar flow gas phase, based on TNSC technology, enables controlled, uniform gas flow and limits parasitic reactions
  • A production-friendly face-down wafer design reduces particle contamination in epitaxial films
  • The system is provided with TNSC's unique automatic logging functions as a standard feature for easy troubleshooting
  • Simple reaction tube design enables easy maintenance
  • Easy-to-use software and operation panel

Applications

Power devices, UV photodetectors

FR2000-OX Specifications

Reactor type Face down, horizontal with rotation
Wafer size 2” x 1 (Single wafer)
Heating system Three (3) zone control, hot-wall system
Sourcses Three (3) or more
Gas nozzles Three-layer laminar flow gas injection

FR2000-OX

Electric furnace (hot wall system)

Product Lineup

GaN

GaAs

Ga2O3

Product inquiries and consultations

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